RFMD (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that it has started pre-production sampling of five new Gallium Arsenide (GaAS) pHEMT low noise amplifiers (LNAs) for GSM, CDMA, UMTS, EDGE and WiMAX air interface standards. These LNA products are currently sampling to key cellular infrastructure and WiMAX base station OEM customers and are targeted for production release in September 2006.

"RFMD''s wireless infrastructure strategy is driven by our design expertise across multiple semiconductor process technologies and our ability to match the optimum technology to our customers'' evolving needs," said Jeff Shealy, Vice President, Infrastructure Product Group for RFMD.

"Through our collaboration with leading infrastructure OEMs, we have developed a family of LNAs that combine the bandwidth and performance necessary for highly linear WCDMA UMTS and OFDM WiMAX modulation standards," Shealy continued. "With minimal external matching, our customers can optimize these parts for a variety of wireless infrastructure applications, including CDMA, PCS, DCS, UMTS, WLAN and WiMAX."
 

The five new GaAs pHEMT LNAs offered are part of the RF386x product family - RF3861, RF3863, RF3865, RF3866 and RF3867. Offering customers a broadband frequency range of 380-3800 MHz with low noise figure (0.7dB) and a variety of LNA configurations (single-stage, dual-stage and dual-channel), these amplifiers provide flexible supply voltages (2.5V to 6.0V), high gain (up to 30dB), very high output IP3 (up to +38dBm) and excellent input and output return loss. In addition, RFMD''s LNA products are packaged in a low-cost, extremely small (5x5 mm) plastic QFN package.