内容导读：

Canon announced on July 8th that it had begun accepting purchase orders for the company''s latest 300 mm-compatible lithography tool--the Canon FPA-6000ES6--a KrF scanning stepper enabling volume production at the 100 nm process node.
Canon''s new 300-mm compatible FPA-6000ES6 scanning stepper, which replaces the FPA-6000ES5, realizes higher resolution and boosted throughput rates. Utilizing a 248 nm KrF (krypton fluoride) excimer laser as its illumination source and an extremely

low aberration 4:1 reduction projection lens with an NA of 0.86, the FPA-6000ES6 makes possible the high contrast, low distortion exposure of minute circuit patterns conforming to the 100 nm design rule.

The FPA-6000ES6 employs an exposure scanning system in which both the reticle and wafer stages move in synchronization, realizing a high wafer scanning speed of 500 mm per second. Also offering a reduced wafer-exchange time and improved control software, the unit achieves throughput levels among the world''s highest--over 147 wph (wafers per hour) for 300 mm wafers, and over 170 wph for 200 mm wafers--making it ideal for volume-production applications.

Canon has scheduled delivery of the FPA-6000ES6 to commence from the second quarter of 2004. The unit is priced at Yen 1.6 billion, but prices will vary according to specifications. Canon has set a first-year sales target of 50 units.
 

标签：

来源:半导体国际 作者: 时间:2003/8/4 0:00:00