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IMEC取得193nm浸入式光刻新进展
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Leuven, Belgium-based independent nanoelectronics and nanotechnology research center IMEC reported today it has achieved significant progress with 193nm immersion lithography technology through the upgrade of an ASML step-and-scan tool.

In IMEC’s labs, an ASML XT:1250i step-and-scan system was upgraded with state-of-the-art hardware last month, with first exposures showing excellent performance in three key areas: improved CD uniformity across the wafer, improved overlay numbers
up to values comparable to dry 193nm lithography, and a spectacular reduction in patterned defectivity, IMEC said.

At a recent symposium, IMEC presented the first conclusive exposure results on the upgraded ASML immersion lithography tool.

First, CD uniformity across the wafer was found to be approximately two times better compared with results obtained with the first generation immersion hardware. This is due to scanning over the edge with better focus control, IMEC noted.

Second, overlay performance was improved to comparable numbers as dry 193nm lithography, thanks to the new ASML stage design.

Finally, defectivity data showed a reduction in number of defects, going down to 0.037 defects per square centimeter.
The results were obtained in the framework of IMEC’s Industrial Affiliation Program on immersion lithography, which unites more than 30 major players in the field of immersion lithography.

Luc Van den hove, VP of silicon process and device technology at IMEC said its partnership ASML is a cornerstone of the IMEC Industrial Affiliation Program on immersion lithography.

“When the program started one year ago we were able to provide our partners access to one of the first full-field step-and-scan systems from ASML. We are very proud that we can show our partners these unique and very positive results obtained on the upgraded system. They prove that the major critical issues for immersion lithography can be overcome making immersion a viable and manufacturable technology for the 45nm node,” he concluded.
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来源:半导体国际 作者: 时间:2005/9/19 0:00:00
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