Mattson Technology, Inc. recently announced that a major US chipmaker has selected its new 300 mm Aspen III eHighlands dry strip system for advanced 65 nm chip production and 45 nm process development. The repeat order follows previously announced sales to a leading Chinese foundry and ATDF, SEMATECH''s R&D wafer fab in Austin, TX. The tool, which will join other Highlands and inductively coupled plasma (ICP) systems already installed at Mattson''s long-standing customer, is exp
ected to ship by the end of the third quarter 2005.
"Mattson''s new Aspen III eHighlands system represents a new market opportunity for our industry-leading strip technology and allows us to extend our strip expertise beyond the strip market to help our customers meet the rigors of high-volume manufacturing at the 90 nm technology node and beyond," said Randy Y. Matsuda, vice president and general manager of Mattson Technology''s Films Etch Product Group. "Backed by our strong global customer support programs, this second-generation system enables robust and reliable processes for critical low-k/copper integration and other back-end-of-line and front-end-of-line applications. This follow-on order signifies our customer''s confidence in our latest strip tool''s excellent processing performance, high throughput and low-cost of ownership advantages and further reinforces our leadership position in the 300 mm dry strip market.
About the Aspen III eHighlands
The latest addition to Mattson''s complete family of dry strip products, the Aspen III eHighlands meets all critical FEOL dry strip process requirements and enables chipmakers to handle copper/low-k dielectric integration, ultra low-k ashing, barrier layer removal and other BEOL dry strip challenges with a single tool. With a low-pressure regime, the eHighlands provides improved profile control, low-k material preservation and a wider process window. Available in 200 mm and 300 mm versions, the system builds on the production-proven Aspen III Highlands and is designed for reliable, high-productivity, low cost-of-ownership manufacturing for 90 nm and below.
来源:半导体国际 作者: 时间:2005/7/25 0:00:00
