Novellus Systems Inc. Sematech said today they are partnering to develop and evaluate low-k dielectric films with k-values of less than 2.2, and explore the limits of ultra low-k integration.
As part of the joint development agreement, Sematech will purchase a Vector plasma-enhanced chemical vapor deposition (PECVD) tool for depositing ultra low-k films, as well as a novel ultraviolet thermal processing (UVTP) system for post-deposition film curing
. Both systems will be delivered to Sematech in October. Novellus will also provide bulk film development and support, while Sematech will contribute its technical expertise in the integration of porous low-k films.
In the back-end-of-line or interconnect process sequence, integrating porous low-k materials with reliable performance has presented a significant challenge for the industry. Although providing bulk film with acceptable mechanical and electrical performance is a requirement, avoiding film damage during further processing steps such as etch, strip, and chemical mechanical planarization is critical.
The combination of Novellus'' ultra low k (ULK) deposition and UVTP cure process technologies provides a film with a closed pore structure that optimizes mechanical and electrical properties as well as stability during integration, Sematech and Novellus said. The film also demonstrates good compatibility with advanced ultra-thin barrier deposition processes such as ion induced atomic layer deposition, they said.
"Unlike e-beam curing technology, UV curing does not damage underlying film layers, and UV energy can be easily tuned to achieve the best porogen removal and hardening results, " Ming Xi, VP and GM of Novellus'' PECVD business unit, said in a statement. "We believe that our ULK deposition and UVTP technology will meet the critical requirements for successful copper/ULK interconnect integration beyond 45nm."
Sematech has designated low-k dielectrics and process compatibility as one of its top challenges for 2005 and 2006, as part of its exploration of the limits of integrating porous low-k materials. In addition to identifying and evaluating ultra low-k materials, the consortium''s engineers also are working to ensure that low-k structures reflect a k-effective value of 2.5 for the 45 nm technology node.
